DMN6040SVT document number: ds35562 rev. 10 - 2 1 of 7 www.diodes.com march 2012 ? diodes incorporated dmn6040s v t advance information 60v n-channel enhanc ement mode mosfet product summary v (br)dss r ds(on) max i d t a = 25c 60v 44m @ v gs = 10v 5.0a 60m @ v gs = 4.5v 4.3a description and applications this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. ? dc-dc converters ? power management functions ? backlighting features and benefits ? 100% unclamped inductive switch (uis) test in production ? low input capacitance ? low on-resistance ? fast switching speed ? lead, halogen, and antimony free, rohs compliant (note 1) ? "green" device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: tsot26 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram ? terminals: finish ? tin finish annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.013 grams (approximate) ordering information (note 3) part number case packaging DMN6040SVT-7 tsot26 3,000/tape & reel notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. no purposely added lead. halogen and antimony free. 2. diodes inc.?s ?green? policy can be f ound on our website at http://www.diodes.com. 3. for packaging details, go to our website at http://www.diodes.com. marking information date code key year 2010 2011 2012 2013 2014 2015 2016 code x y z a b c d month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d tsot26 top view top view pin configuration 32d = product type marking code ym = date code marking y = year (ex: x = 2010) m = month (ex: 9 = september) 32d ym d d g d d s 1 2 3 6 5 4 source body diode gate drain equivalent circuit
DMN6040SVT document number: ds35562 rev. 10 - 2 2 of 7 www.diodes.com march 2012 ? diodes incorporated dmn6040s v t advance information maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss 60 v gate-source voltage v gss 20 v continuous drain current (note 5) v gs = 10v steady state t a = 25c t a = 70c i d 5.0 4.0 a t<10s t a = 25c t a = 70c i d 6.3 5.0 a continuous drain current (note 5) v gs = 5v steady state t a = 25c t a = 70c i d 4.3 3.4 a t<10s t a = 25c t a = 70c i d 5.4 4.3 a maximum body diode forward current (note 5) i s 2.1 a pulsed drain current (10 s pulse, duty cycle = 1%) i dm 30 a avalanche current (note 6) l = 0.1mh i ar 14.2 a avalanche energy (note 6) l = 0.1mh e ar 10 mj thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value units total power dissipation (note 4) t a = 25c p d 1.2 w t a = 70c 0.75 thermal resistance, junction to ambient (note 4) steady state r ja 106 c/w t<10s 69 c/w total power dissipation (note 5) t a = 25c p d 1.8 w t a = 70c 1.1 thermal resistance, junction to ambient (note 5) steady state r ja 68 c/w t<10s 44 c/w thermal resistance, junction to case (note 5) r jc 20 c/w operating and storage temperature range t j, t stg -55 to +150 c 0 20 40 60 80 100 t1, pulse duration time (sec) fig. 1 single pulse maximum power dissipation 0.001 0.01 0.1 1 10 100 1,000 0.0001 p , p eak t r ansien t p o iwe r (w) (pk) single pulse r = 72c/w r = r * r t - t = p * r ? ja ja(t) (t) ja ja ja(t) 0.1 1 10 100 v , drain-source voltage (v) fig. 2 soa, safe operation area ds 0.01 0.1 1 10 100 i, d r ai n c u r r e n t (a) d r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10s w
DMN6040SVT document number: ds35562 rev. 10 - 2 3 of 7 www.diodes.com march 2012 ? diodes incorporated dmn6040s v t advance information 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration time (sec) fig. 3 transient thermal resistance 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e r = r * r ja(t) (t) ja ja r = 72c/w duty cycle, d = t1/t2 d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss 60 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current i dss ? ? 100 na v ds = 60v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) 1 ? 3 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) ? 30 44 m v gs = 10v, i d = 4.3a ? 35 60 v gs = 4.5v, i d = 4a forward transfer admittance |y fs | ? 4.5 ? s v ds = 10v, i d = 4.3a diode forward voltage v sd ? 0.7 1.2 v v gs = 0v, i s = 1a dynamic characteristics (note 8) input capacitance c iss ? 1287 ? pf v ds = 25v, v gs = 0v f = 1.0mhz output capacitance c oss ? 57 ? reverse transfer capacitance c rss ? 44 ? gate resistance r g ? 1.2 ? v ds = 0v, v gs = 0v, f = 1.0mhz total gate charge (v gs = 10v) q g ? 22.4 ? nc v ds = 30v, i d = 4.3a total gate charge (v gs = 4.5v) q g ? 10.4 ? gate-source charge q g s ? 4.9 ? gate-drain charge q g d ? 3.0 ? turn-on delay time t d ( on ) ? 6.6 ? ns v gs = 10v, v dd = 30v, r g = 6 , i d = 4.3a turn-on rise time t r ? 8.1 ? turn-off delay time t d ( off ) ? 20.1 ? turn-off fall time t f ? 4.0 ? body diode reverse recovery time t r r ? 18 ? ns i s = 4.3a, di/dt = 100a/ s body diode reverse recovery charge q r r ? 11.9 ? nc i s = 4.3a, di/dt = 100a/ s notes: 4. device mounted on fr-4 substrate pc board, 2oz copper, with minimum recommended pad layout. 5. device mounted on fr-4 substrate pc board, 2oz copper, with 1inch square copper plate. 6. i ar and e ar rating are based on low frequency and duty cycles to keep t j = 25c 7. short duration pulse test used to minimize self-heating effect. 8. guaranteed by design. not subject to product testing.
DMN6040SVT document number: ds35562 rev. 10 - 2 4 of 7 www.diodes.com march 2012 ? diodes incorporated dmn6040s v t advance information 0 0.5 1.0 1.5 2.0 2.5 3.0 v , drain-source voltage (v) fig. 4 typical output characteristic ds 0 4 8 12 16 20 i, d r ain c u r r en t (a) d 01 2 3 45 v , gate-source voltage gs fig. 5 typical transfer characteristics 0 4 8 12 16 20 i, d r ain c u r r en t (a) d v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 04 8121620 i , drain-source current d fig. 6 typical on-resistance vs. drain current and gate voltage r , d r ain-s o u r ce o n- r esistance ( ) ds(on) v = 4.5v gs v = 10v gs 0 0.02 0.04 0.06 0.08 0.10 012345678910 v , gate-source voltage (v) gs fig. 7 typical on-resistance vs. drain current and gate voltage r , d r ain-s o u r ce o n- r esistance ( ) ds(on) i= 4.5a d i= 3.5a d 04 8121620 i , drain current d fig. 8 typical on-resistance vs. drain current and temperature 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs t = -55c a 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.2 2.4 2.0 1.0 0 50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) fig. 9 on-resistance variation with temperature j r , d r ai n -s o u r c e on-resistance (normalized) ds(on) v = 4.5v i= 5a gs d v=v i= 10a gs d 10
DMN6040SVT document number: ds35562 rev. 10 - 2 5 of 7 www.diodes.com march 2012 ? diodes incorporated dmn6040s v t advance information -50-25 0 255075100125150 t , junction temperature ( c) fig. 10 on-resistance variation with temperature j 0 0.02 0.04 0.06 0.08 0.10 r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) v = 4.5v i = 500ma gs d v= v i = 200ma gs d 2.5 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) fig. 11 gate threshold variation vs. ambient temperature j 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v, g a t e t h r es h o ld v o l t a g e (v) gs(th) i= 1ma d i = 250a d 0 0.2 0.4 0.6 0.8 1.0 1.2 v , source-drain voltage (v) sd fig. 12 diode forward voltage vs. current 0 4 8 12 16 20 i, s o u r c e c u r r en t (v) s t = 25c a 0 51015202530 v , drain-source voltage (v) ds fig. 13 typical junction capacitance c , junction capacitance (pf) t c iss c oss c rss f = 1mhz 0 5 10 15 20 25 v g a t e t h r es h o ld v o l t a g e (v) gs q( n c ) g , total gate charge fig. 14 gate charge v = 30v i= a ds d 4.3
DMN6040SVT document number: ds35562 rev. 10 - 2 6 of 7 www.diodes.com march 2012 ? diodes incorporated dmn6040s v t advance information package outline dimensions suggested pad layout tsot26 dim min max typ a ? 1.00 ? a1 0.01 0.10 ? a2 0.84 0.90 ? d ? ? 2.90 e ? ? 2.80 e1 ? ? 1.60 b 0.30 0.45 ? c 0.12 0.20 ? e ? ? 0.95 e1 ? ? 1.90 l 0.30 0.50 ? l2 ? ? 0.25 0 8 4 1 4 12 ? all dimensions in mm dimensions value (in mm) c 0.950 x 0.700 y 1.000 y1 3.199 c a1 l e1 e a2 d e1 e 6x b 4x 1 l2 a y1 c c x (6x) y (6x)
DMN6040SVT document number: ds35562 rev. 10 - 2 7 of 7 www.diodes.com march 2012 ? diodes incorporated dmn6040s v t advance information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2012, diodes incorporated www.diodes.com
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